NXP Semiconductors Microwave Oven BFU725F User Manual

SiGeC microwave NPN  
transistor BFU725F  
A perfect match up to 20 GHz  
Meet the trend towards higher frequencies. With NXP Semiconductors’ latest SiGeC microwave  
NPN transistor BFU725F, you get high switching frequencies plus extremely high gain and low noise.  
All this in an easy-to-use SOT343F package. It’s the ideal solution for applications up to 20 GHz.  
Key features  
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Very low noise (0.4 dB at 1.8 GHz / 0.67 dB at 5.8 GHz)  
High maximum stable gain (27.8 dB at 1.8 GHz / 10 dB  
at 18 GHz)  
The NPN microwave transistor BFU725F delivers an unbeatable  
blend of high switching frequency, high gain and very low  
noise. Thanks to its ultra-low noise figure, it’s perfect for your  
sensitive RF receivers particularly those for high-performance  
cell phones. Alternatively, with its high cut-off frequency,  
it’s your ideal solution for microwave applications in the 10 GHz  
to 30 GHz range, such as satellite TV receivers and automotive  
collision avoidance radar.  
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High switching frequency (fT >100 GHz / fMAX >150 GHz)  
Plastic surface-mount SOT343F package  
Key benefits  
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SiGeC process delivers high switching frequency from  
a silicon-based device  
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Cost-effective alternative to GaAs devices  
RoHS compliant  
The BFU725F get its outstanding performance from our  
innovative silicon-germanium-carbon (SiGeC) BiCMOS  
process. QUBiC4X was designed specifically to meet the  
needs of real-life, high-frequency applications and delivers  
an unrivalled fusion of high power gain and excellent dynamic  
range. It combines the performance of gallium-arsenide (GaAs)  
technologies with the reliability of a silicon-based process.  
Key applications  
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GPS systems  
DECT phones  
Low noise amplifier (LNA) for microwave  
communications systems  
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2nd stage LNA and mixer in direct broadcast satellite (DBS)  
low-noise blocks (LNBs)  
In addition, with the BFU725F, you don’t need a biasing IC or  
negative biasing voltage. So it’s a much more cost-effective  
solution than GaAs pHEMT devices.  
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Satellite radio  
WLAN and CDMA applications  
Low-noise microwave applications  
 

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